Auger recombination in quantum-well InGaAsP heterostructure lasers
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منابع مشابه
Auger Recombination in Quantum - Well InGaAsP Heterostructure Lasers
Interband nonradiative Auger recombination in quantumwell InGaAsP/InP heterostructure lasers has been calculated. It is found that the Auger rate is much reduced in the quasi two-dimensional quantum-well lasers. This suggests that the temperature sensitivity of quantum-well InGaAsP lasers is much less than ordinary structures with much higher values of To at around room temperatures. A CONTINUI...
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Different possible processes of non-radiative Auger recombination which occur in the active region of quantum-well lasers are analyzed and the temperature dependence of the lasing threshold in the GaInAs-GaInAsP-InP bi-quantum-well heterolasers with different widths of the quantum wells (4 and 9 nm) is determined. Activated behavior of the Auger recombination is mentioned and respective effecti...
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Both radiative and nonradiative processes which occur in the active region of GaInAs–GaInAsP–InP asymmetric multiple quantum-well (AMQW) heterolasers with two quantum wells of different width (4 and 9 nm) are described. Several possible processes of non-radiative Auger recombination which affect the temperature sensitivity of the lasing threshold are analyzed and the temperature dependencies of...
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We report on the pressure dependence of the threshold current in 1.3 mm InGaAsP and 1.5 mm InGaAs quantum-well lasers measured at low temperatures ,100 K. It was found that the threshold current of both devices slowly increases with increasing pressure (i.e., increasing band gap) at ,100 K consistent with the calculated variation of the radiative current. In contrast, at room temperature we obs...
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ژورنال
عنوان ژورنال: IEEE Journal of Quantum Electronics
سال: 1982
ISSN: 0018-9197
DOI: 10.1109/jqe.1982.1071437